Role of Oxygen and Carbon Impurities in the Radiation Resistance of Silicon Detectors

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dc.creatorLazanu, Sorina
dc.creatorLazanu, Ionel
dc.date2003-10-07
dc.date.accessioned2026-07-07T05:50:11Z
dc.date.available2026-07-07T05:50:11Z
dc.descriptionThe influence of oxygen and carbon impurities on the concentrations of defects in silicon for detector uses, in complex fields of radiation (proton cosmic field at low orbits around the Earth, at Large Hadron Collider and at the next generation of accelerators as Super-LHC) is investigated in the frame of the quantitative model developed previously by the authors. The generation rate of primary defects is calculated starting from the projectile - silicon interaction and from recoil energy redistribution in the lattice. The mechanisms of formation of complex defects are explicitly analysed. Vacancy-interstitial annihilation, interstitial and vacancy migration to sinks, divacancy, vacancy and interstitial impurity complex formation and decomposition are considered. Oxygen and carbon impurities present in silicon could monitor the concentration of all stable defects, due to their interaction with vacancies and interstitials. Their role in the mechanisms of formation and decomposition of the following stable defects: VP, VO, V_2, V_2O, C_i, C_iO_i and C_iC_s is studied. The model predictions could be a useful clue in obtaining harder materials for detectors at the new generation of accelerators, for space missions or for industrial applications.
dc.description6 pages, 2 figures, presented to the Romanian Conference on Advanced Materials, Constantza, Romania, Sept. 2003
dc.identifierhttps://arxiv.org/abs/physics/0310032
dc.identifierhttp://arxiv.org/abs/physics/0310032
dc.identifierJ.Optoelectron.Adv.Mat. 5 (2003) 647-652
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/85633
dc.subjectInstrumentation and Detectors
dc.subjectHigh Energy Physics - Phenomenology
dc.titleRole of Oxygen and Carbon Impurities in the Radiation Resistance of Silicon Detectors
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