Dissipationless Quantum Spin Current at Room Temperature

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dc.creatorMurakami, Shuichi
dc.creatorNagaosa, Naoto
dc.creatorZhang, Shou-Cheng
dc.date2003-08-08
dc.date.accessioned2026-07-07T02:52:50Z
dc.date.available2026-07-07T02:52:50Z
dc.descriptionWhile microscopic laws of physics are invariant under the reversal of the arrow of time, the transport of energy and information in most devices is an irreversible process. It is this irreversibility that leads to intrinsic dissipations in electronic devices and limits the possibility of quantum computation. We theoreticallypredict that the electric field can induce a substantial amount of dissipationless quantum spin current at room temperature, in hole doped semiconductors such as Si, Ge and GaAs. Based on a generalization of the quantum Hall effect, the predicted effect leads to efficient spin injection without the need for metallic ferromagnets. Principles found in this work could enable quantum spintronic devices with integrated information processing and storage units, operating with low power consumption and performing reversible quantum computation.
dc.description18 pages, 3 figures, Submitted to Science on May 22, and published by Science within the Science Express web site (see http://www.sciencemag.org/sciencexpress/recent.shtml) on August 7, 2003 (10.1126/science.1087128). Movie file available at http://appi.t.u-tokyo.ac.jp/~murakami/spintronics.htm and http://so5.stanford.edu/Research/Projects/spintronics.htm . For related work on spin current, please see cond-mat/0307663
dc.identifierhttps://arxiv.org/abs/cond-mat/0308167
dc.identifierhttp://arxiv.org/abs/cond-mat/0308167
dc.identifierScience 301, 1348(2003)
dc.identifierdoi:10.1126/science.1087128
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/21988
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleDissipationless Quantum Spin Current at Room Temperature
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