Memory effects in ac hopping conductance in the quantum Hall effect regime: Possible manifestation of DX$^-$ centers

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dc.creatorDrichko, I. L.
dc.creatorDiakonov, A. M.
dc.creatorSmirnov, I. Yu.
dc.creatorPreobrazenskii, V. V.
dc.creatorToropov, A. I.
dc.creatorGalperin, Y. M.
dc.date2002-04-04
dc.date.accessioned2026-07-07T02:44:55Z
dc.date.available2026-07-07T02:44:55Z
dc.descriptionUsing simultaneous measurements of the attenuation and velocity of surface acoustic waves propagating along GaAs/Al$_{0.3}$Ga$_{0.7}$As heterostructures, complex ac conductance of the latters has been determined. In the magnetic fields corresponding to the middles of the Hall plateaus both the ac conductance, $σ(ω)$, and the sheet electron density, $n_s$, in the two-dimensional conducting layer turn out to be dependent on the samples' cooling rate. As a result, the sample ``remembers'' the cooling conditions. The complex conductance is strongly dependent on an infrared illumination which also changes both $σ(ω)$ and $n_s$. Remarkably, the correlation between $σ(ω)$ and $n_s$ is \emph{universal}, i.e. it is independent of the way to change these quantities. The results are attributed to two-electron defects (so-called $DX^-$ centers) located in the Si doped layer.
dc.descriptionRevtex 4, 7 pages, 7 fugres
dc.identifierhttps://arxiv.org/abs/cond-mat/0204101
dc.identifierhttp://arxiv.org/abs/cond-mat/0204101
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/19125
dc.subjectMesoscale and Nanoscale Physics
dc.titleMemory effects in ac hopping conductance in the quantum Hall effect regime: Possible manifestation of DX$^-$ centers
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