Thermally Assisted Flux Flow in MgB2 : Strong Magnetic Field Dependence of the Activation Energy

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dc.creatorSidorenko, A.
dc.creatorZdravkov, V.
dc.creatorRyazanov, V.
dc.creatorHorn, S.
dc.creatorKlimm, S.
dc.creatorTidecks, R.
dc.creatorWixforth, A.
dc.creatorKoch, Th.
dc.creatorSchimmel, Th.
dc.date2004-06-02
dc.date.accessioned2026-07-07T02:58:27Z
dc.date.available2026-07-07T02:58:27Z
dc.descriptionThe origin of the resistive transition broadening for MgB2 thin films was investigated. Thermally activated flux flow is found to be responsible for the resistivity contribution in the vicinity of Tc. The origin of the observed extraordinary strong magnetic field dependence of the activation energy of the flux motion is discussed.
dc.description10 pages, 5 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0406062
dc.identifierhttp://arxiv.org/abs/cond-mat/0406062
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/24096
dc.subjectSuperconductivity
dc.titleThermally Assisted Flux Flow in MgB2 : Strong Magnetic Field Dependence of the Activation Energy
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