Theory of magnetoresistance based on variable-range hopping in the presence of Hubbard interaction and spin-dynamics

Simple item page
dc.creatorWohlgenannt, M.
dc.date2006-09-22
dc.date2006-09-26
dc.date.accessioned2026-07-07T07:23:40Z
dc.date.available2026-07-07T07:23:40Z
dc.descriptionWe develop a theory of magnetoresistance based on variable-range hopping. An exponentially large, low-field and necessarily positive magnetoresistance effect is predicted in the presence of Hubbard interaction and spin-dynamics under certain conditions. The theory was developed with the recently discovered organic magnetoresistance in mind. To account for the experimental observation that the organic magnetoresistance effect can also be negative, we tentatively amend the theory with a mechanism of bipolaron formation.
dc.description5 pages, 1 figure
dc.identifierhttps://arxiv.org/abs/cond-mat/0609592
dc.identifierhttp://arxiv.org/abs/cond-mat/0609592
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/116068
dc.subjectSoft Condensed Matter
dc.subjectDisordered Systems and Neural Networks
dc.titleTheory of magnetoresistance based on variable-range hopping in the presence of Hubbard interaction and spin-dynamics
dc.typetext

Files

Collections

arXiv