Mechanism of enhancement of electromagnetic properties of MgB2 by nano-SiC doping

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dc.creatorDou, S. X.
dc.creatorShcherbakova, O.
dc.creatorYeoh, W. K.
dc.creatorKim, J. H.
dc.creatorSoltanian, S.
dc.creatorWang, X. L.
dc.creatorSenatore, C.
dc.creatorFlukiger, R.
dc.creatorDhalle, M.
dc.creatorHusnjak, O.
dc.creatorBabic, E.
dc.date2007-01-16
dc.date2007-03-01
dc.date.accessioned2026-07-07T07:49:17Z
dc.date.available2026-07-07T07:49:17Z
dc.descriptionA comparative study of pure, SiC, and C doped MgB2 wires has revealed that the SiC doping allowed C substitution and MgB2 formation to take place simultaneously at low temperatures. C substitution enhances Hc2, while the defects, small grain size and nanoinclusions induced by C incorporation and low temperature processing are responsible for the improvement in Jc. The irreversibility field (Hirr) for the SiC doped sample reached the benchmarking value of 10 T at 20 K, exceeding that of NbTi at 4.2 K. This dual reaction model also enables us to predict desirable dopants for enhancing the performance properties of MgB2.
dc.description15 pages, 4 figures, 1 table. accepted for publication in Physical Review Letter
dc.identifierhttps://arxiv.org/abs/cond-mat/0701391
dc.identifierhttp://arxiv.org/abs/cond-mat/0701391
dc.identifierPhys. Rev. Lett. 98, 097002 (2007)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/124789
dc.subjectSuperconductivity
dc.titleMechanism of enhancement of electromagnetic properties of MgB2 by nano-SiC doping
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