Zero valley splitting at zero magnetic field for strained Si/SiGe quantum wells grown on tilted substrates

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dc.creatorvon Allmen, Paul
dc.creatorLee, Seungwon
dc.date2006-06-15
dc.date.accessioned2026-07-07T07:12:41Z
dc.date.available2026-07-07T07:12:41Z
dc.descriptionThe electronic structure for a strained Si/SiGe quantum well grown on a tilted substrate with periodic steps is calculated using a parameterized tight-binding method. For a zero tilt angle the energy difference between the two lowest minima of the conduction band at the center of the Brillouin zone defines a non-zero valley splitting. At finite tilt angles, the two lowest conduction band minima shift to k0 and -k0 in the Brillouin zone and have equal energy. The valley splitting for quantum wells grown on a tilted substrate is therefore equal to zero, which is a direct consequence of the periodicity of the steps at the interfaces between the quantum well and the buffer materials.
dc.identifierhttps://arxiv.org/abs/cond-mat/0606395
dc.identifierhttp://arxiv.org/abs/cond-mat/0606395
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/112159
dc.subjectMaterials Science
dc.titleZero valley splitting at zero magnetic field for strained Si/SiGe quantum wells grown on tilted substrates
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