Direct observation of excitonic polaron in InAs/GaAs quantum dots

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dc.creatorGong, Ming
dc.creatorLi, Chuan-Feng
dc.creatorChen, Geng
dc.creatorHe, Lixin
dc.creatorSun, F. W.
dc.creatorGuo, Guang-Can
dc.creatorNiu, Zhi-Chuan
dc.creatorHuang, She-Song
dc.creatorXiong, Yong-Hua
dc.creatorNi, Hai-Qiao
dc.date2007-08-03
dc.date2007-08-15
dc.date.accessioned2026-07-07T08:23:31Z
dc.date.available2026-07-07T08:23:31Z
dc.descriptionExcitonic polaron is directly demonstrated for the first time in InAs/GaAs quantum dots with photoluminescence method. A new peak ($s'$) below the ground state of exciton ($s$) comes out as the temperature varies from 4.2 K to 285 K, and a huge anticrossing energy of 31 meV between $s'$ and $s$ is observed at 225 K, which can only be explained by the formation of excitonic polaron. The results also provide a strong evidence for the invalidity of Huang-Rhys formulism in dealing with carrier-longitudinal optical phonon interaction in quantum dot. Instead, we propose a simple two-band model, and it fits the experimental data quite well. The reason for the finding of the anticrossing is also discussed.
dc.description7 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/0708.0468
dc.identifierhttp://arxiv.org/abs/0708.0468
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/136022
dc.subjectMaterials Science
dc.titleDirect observation of excitonic polaron in InAs/GaAs quantum dots
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