Potential Profiling of the Nanometer-Scale Charge Depletion Layer in n-ZnO/p-NiO Junction Using Photoemission Spectroscopy

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dc.creatorIshida, Y.
dc.creatorOhta, H.
dc.creatorHirano, M.
dc.creatorFujimori, A.
dc.creatorHosono, H.
dc.date2006-04-24
dc.date.accessioned2026-07-07T07:05:42Z
dc.date.available2026-07-07T07:05:42Z
dc.descriptionWe have performed a depth-profile analysis of an all-oxide p-n junction diode n-ZnO/p-NiO using photoemission spectroscopy combined with Ar-ion sputtering. Systematic core-level shifts were observed during the gradual removal of the ZnO overlayer, and were interpreted using a simple model based on charge conservation. Spatial profile of the potential around the interface was deduced, including the charge-depletion width of 2.3 nm extending on the ZnO side and the built-in potential of 0.54 eV.
dc.identifierhttps://arxiv.org/abs/cond-mat/0604549
dc.identifierhttp://arxiv.org/abs/cond-mat/0604549
dc.identifierAppl. Phys. Lett. 89, 153502 (2006)
dc.identifierdoi:10.1063/1.2358858
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/109757
dc.subjectMaterials Science
dc.subjectStrongly Correlated Electrons
dc.titlePotential Profiling of the Nanometer-Scale Charge Depletion Layer in n-ZnO/p-NiO Junction Using Photoemission Spectroscopy
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