Gate-controlled non-volatile graphene-ferroelectric memory

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dc.creatorZheng, Yi
dc.creatorNi, Guang-Xin
dc.creatorToh, Chee-Tat
dc.creatorZeng, Ming-Gang
dc.creatorChen, Shu-Ting
dc.creatorYao, Kui
dc.creatorOzyilmaz, Barbaros
dc.date2009-04-08
dc.date2009-04-23
dc.date.accessioned2026-07-07T13:07:09Z
dc.date.available2026-07-07T13:07:09Z
dc.descriptionIn this letter, we demonstrate a non-volatile memory device in a graphene FET structure using ferroelectric gating. The binary information, i.e. "1" and "0", is represented by the high and low resistance states of the graphene working channels and is switched by controlling the polarization of the ferroelectric thin film using gate voltage sweep. A non-volatile resistance change exceeding 200% is achieved in our graphene-ferroelectric hybrid devices. The experimental observations are explained by the electrostatic doping of graphene by electric dipoles at the ferroelectric/graphene interface.
dc.description4 papes, 4 figures
dc.identifierhttps://arxiv.org/abs/0904.1326
dc.identifierhttp://arxiv.org/abs/0904.1326
dc.identifierAppl. Phys. Lett. 94, 163505 (2009)
dc.identifierdoi:10.1063/1.3119215
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/228001
dc.subjectMesoscale and Nanoscale Physics
dc.titleGate-controlled non-volatile graphene-ferroelectric memory
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