Characterization of a high-power tapered semiconductor amplifier system

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dc.creatorVoigt, D.
dc.creatorSchilder, E. C.
dc.creatorSpreeuw, R. J. C.
dc.creatorHeuvell, H. B. van Linden van den
dc.date2000-04-19
dc.date.accessioned2026-07-07T05:44:01Z
dc.date.available2026-07-07T05:44:01Z
dc.descriptionWe have characterized a semiconductor amplifier laser system which provides up to 200mW output after a single-mode optical fiber at 780nm wavelength. The system is based on a tapered semiconductor gain element, which amplifies the output of a narrow-linewidth diode laser. Gain and saturation are discussed as a function of operating temperature and injection current. The spectral properties of the amplifier are investigated with a grating spectrometer. Amplified spontaneous emission (ASE) causes a spectral background with a width of 4nm FWHM. The ASE background was suppressed to below our detection limit by a proper choice of operating current and temperature, and by sending the light through a single-mode optical fiber. The final ASE spectral density was less than 0.1nW/MHz, i.e. less than 0.2 % of the optical power. Related to an optical transition linewidth of $Γ/2π=6$ MHz for rubidium, this gives a background suppression of better than -82dB. An indication of the beam quality is provided by the fiber coupling efficiency up to 59 %. The application of the amplifier system as a laser source for atom optical experiments is discussed.
dc.description6 pages, 6 figures
dc.identifierhttps://arxiv.org/abs/physics/0004043
dc.identifierhttp://arxiv.org/abs/physics/0004043
dc.identifierAppl. Phys. B 72, 279284 (2001)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/83472
dc.subjectAtomic Physics
dc.subjectOptics
dc.titleCharacterization of a high-power tapered semiconductor amplifier system
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