Quantum Hall Effect in a Graphene p-n Junction

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dc.creatorWilliams, J. R.
dc.creatorDiCarlo, L.
dc.creatorMarcus, C. M.
dc.date2007-04-26
dc.date2007-08-28
dc.date.accessioned2026-07-07T08:25:40Z
dc.date.available2026-07-07T08:25:40Z
dc.descriptionWe report on the fabrication and transport studies of a single-layer graphene p-n junction. Carrier type and density in two adjacent regions are individually controlled by electrostatic gating using a local top gate and a global back gate. A functionalized Al203 oxide that adheres to graphene and does not significantly affect its electronic properties is described. Measurements in the quantum Hall regime reveal new plateaus of two-terminal conductance across the junction at 1 and 3/2 times the quantum of conductance, e2/h, consistent with theory.
dc.descriptionrelated papers at http://marcuslab.harvard.edu. Fixed a factor of 2 in Eq. 1 and 2
dc.identifierhttps://arxiv.org/abs/0704.3487
dc.identifierhttp://arxiv.org/abs/0704.3487
dc.identifierScience 317, 638 (2007)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/136699
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleQuantum Hall Effect in a Graphene p-n Junction
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