Effect of disorder on the temperature dependence of radiative lifetimes in V-groove quantum wires

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dc.creatorOberli, D. Y.
dc.creatorDupertuis, M. -A.
dc.creatorReinhardt, F.
dc.creatorKapon, E.
dc.date1998-12-04
dc.date.accessioned2026-07-07T03:12:18Z
dc.date.available2026-07-07T03:12:18Z
dc.descriptionWe have studied the effect of disorder on the radiative properties of semiconductor quantum wires by time-resolved photoluminescence spectroscopy. The dependence of the radiative lifetimes is measured over a temperature range extending from 8 to 150 K. At low temperatures we find that the measured dependence does not conform to the theoretical prediction for recombination of free excitons in a quasi one-dimensional system due to the major influence of disorder. An extension of the theory is developped in order to take into account exciton ionization and the contribution of free carriers. A mean localization length for excitons is also estimated from the radiative lifetime at 8 K.
dc.description10 pages, 5 figures to be published in Phys. Rev. B (15 january 1999)
dc.identifierhttps://arxiv.org/abs/cond-mat/9812076
dc.identifierhttp://arxiv.org/abs/cond-mat/9812076
dc.identifierPhys. Rev. B 59, 2910 (1999)
dc.identifierdoi:10.1103/PhysRevB.59.2910
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/28856
dc.subjectMaterials Science
dc.titleEffect of disorder on the temperature dependence of radiative lifetimes in V-groove quantum wires
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