Near-field light emission from dark-states inverted exciton occupations

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dc.creatorPistone, G.
dc.creatorSavasta, S.
dc.creatorDi Stefano, O.
dc.creatorMartino, G.
dc.creatorGirlanda, R.
dc.creatorPortolan, S.
dc.date2006-11-13
dc.date.accessioned2026-07-07T07:31:18Z
dc.date.available2026-07-07T07:31:18Z
dc.descriptionWe theoretically analyze the carrier capture and distribution among the available energy levels of a symmetric semiconductor quantum dot under continuous-wave excitation resonant with the barrier energy levels. At low temperature all the dot level-occupations but one decrease monotonically with energy. The uncovered exception, corresponding to the second (dark) energy level, displays a steady-state carrier density exceeding that of the lowest level more than a factor two. The root cause is not radiative recombination before relaxation to lower energy levels, but at the opposite, carrier trapping due to the symmetry-induced suppression of radiative recombination. Such a behaviour can be observed by collection-mode near-field optical microscopy.
dc.description4 pages, 5 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0611335
dc.identifierhttp://arxiv.org/abs/cond-mat/0611335
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/118703
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleNear-field light emission from dark-states inverted exciton occupations
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