Measurements of the density-dependent many-body electron mass in 2D GaAs/AlGaAs Heterostructures

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dc.creatorTan, Y. -W.
dc.creatorZhu, J.
dc.creatorStormer, H. L.
dc.creatorPfeiffer, L. N.
dc.creatorBaldwin, K. W.
dc.creatorWest, K. W.
dc.date2004-12-10
dc.date.accessioned2026-07-07T03:02:36Z
dc.date.available2026-07-07T03:02:36Z
dc.descriptionWe determine the density-dependent electron mass, m*, in two-dimensional (2D) electron systems of GaAs/AlGaAs heterostructures by performing detailed low-temperature Shubnikov deHaas measurements. Using very high quality transistors with tunable electron densities we measure m* in single, high mobility specimens over a wide range of r_s (6 to 0.8). Toward low-densities we observe a rapid increase of m* by as much as 40%. For 2>r_s>0.8 the mass values fall ~10% below the band mass of GaAs. Numerical calculations are in qualitative agreement with our data but differ considerably in detail.
dc.descriptionto be published in Physical Review Letters
dc.identifierhttps://arxiv.org/abs/cond-mat/0412260
dc.identifierhttp://arxiv.org/abs/cond-mat/0412260
dc.identifierPhys. Rev. Lett. 94, 016405 (2005)
dc.identifierdoi:10.1103/PhysRevLett.94.016405
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/25453
dc.subjectMesoscale and Nanoscale Physics
dc.titleMeasurements of the density-dependent many-body electron mass in 2D GaAs/AlGaAs Heterostructures
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