Structure and growth of titanium buffer layers on Al2O3(0001)

dc.creatorSondergard, E.
dc.creatorKerjan, O.
dc.creatorBarreteau, C.
dc.creatorJupille, J.
dc.date2004-06-16
dc.date.accessioned2026-07-07T02:58:39Z
dc.date.available2026-07-07T02:58:39Z
dc.descriptionThe structure of titanium films on α- Al2O3(0001) surfaces at room temperature was investigated through in situ reflection high energy electron diffraction (RHEED). The α-phase of titanium was observed to grow with the Ti(0001) || Al2O3(0001), Ti[1100] || Al2O3[2110] and Ti[1010] || Al2O3[1100] epitaxy. For up to 6 nm thick films, an other structure was found to coexist with α-Ti. Its presence has dramatic consequences for the wetting of silver, which partly explains the nontrivial buffer effect of titanium at the silver/alumina interface. From the RHEED data, the extra structure is assigned to the high-pressure hexagonal ω-Ti phase. This is supported by tight-binding total energy calculations that demonstrate that the ωphase could actually be stabilized by the α- Al2O3(0001) substrate.
dc.identifierhttps://arxiv.org/abs/cond-mat/0406376
dc.identifierhttp://arxiv.org/abs/cond-mat/0406376
dc.identifierSurface Science 559 (2004) 131-140
dc.identifierdoi:10.1016/j.susc.2004.03.072
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/24189
dc.subjectMaterials Science
dc.titleStructure and growth of titanium buffer layers on Al2O3(0001)
dc.typetext

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