Quantum-Dot Cascade Laser: Proposal for an Ultra-Low-Threshold Semiconductor Laser

dc.creatorWingreen, Ned S.
dc.creatorStafford, Charles A.
dc.date1996-05-02
dc.date.accessioned2026-07-07T06:31:48Z
dc.date.available2026-07-07T06:31:48Z
dc.descriptionWe propose a quantum-dot version of the quantum-well cascade laser of Faist et al. [Science {\bf 264}, 553 (1994)]. The elimination of single phonon decays by the three-dimensional confinement implies a several order-of-magnitude reduction in the threshold current. The requirements on dot size (10-20nm) and on dot density and uniformity [one coupled pair of dots per (180nm)^3 with 5% nonuniformity] are close to current technology.
dc.description8 pages, REVTEX 3.0, 3 compressed postscript figures
dc.identifierhttps://arxiv.org/abs/cond-mat/9605013
dc.identifierhttp://arxiv.org/abs/cond-mat/9605013
dc.identifierIEEE J. Quantum Electron. 33, 1170 (1997)
dc.identifierdoi:10.1109/3.594880
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/98715
dc.subjectCondensed Matter
dc.titleQuantum-Dot Cascade Laser: Proposal for an Ultra-Low-Threshold Semiconductor Laser
dc.typetext

Files

Collections