Charge dynamics and metal-insulator transition in Si$_{1-x}$Gd$_{x}$ and Si$_{1-x}$Y$_{x}$ alloys

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dc.creatorBasov, D. N.
dc.creatorBratkovsky, A. M.
dc.creatorHenning, P. F.
dc.creatorZink, B.
dc.creatorHellman, F.
dc.creatorWang, Y. J.
dc.creatorHomes, C. C.
dc.creatorStrongin, M.
dc.date2001-04-13
dc.date.accessioned2026-07-07T02:41:03Z
dc.date.available2026-07-07T02:41:03Z
dc.descriptionCarrier dynamics in amorphous a-Si$_{1-x}$RE$_{x}$ (RE=Gd, Y) films has been studied in the doping regime close to the metal-insulator transition by means of infrared spectroscopy. Optical constants throughout the entire intra-gap region ($\hbar ω<$ 1 eV) have been found to be anomalously sensitive to changes of temperature and/or magnetic field. The observed behavior is consistent with the model of hopping transport where the interaction of carriers with both the lattice and large core spin of Gd ions is taken into account.
dc.description4 pages, 2 figures, REVTeX 3.1
dc.identifierhttps://arxiv.org/abs/cond-mat/0104245
dc.identifierhttp://arxiv.org/abs/cond-mat/0104245
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/17597
dc.subjectStrongly Correlated Electrons
dc.titleCharge dynamics and metal-insulator transition in Si$_{1-x}$Gd$_{x}$ and Si$_{1-x}$Y$_{x}$ alloys
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