Spin-glass-like behavior of Ge:Mn

dc.creatorJaeger, C.
dc.creatorBihler, C.
dc.creatorVallaitis, T.
dc.creatorGoennenwein, S. T. B.
dc.creatorOpel, M.
dc.creatorGross, R.
dc.creatorBrandt, M. S.
dc.date2006-04-03
dc.date2006-07-24
dc.date.accessioned2026-07-07T07:05:13Z
dc.date.available2026-07-07T07:05:13Z
dc.descriptionWe present a detailed study of the magnetic properties of low-temperature-molecular-beam-epitaxy grown Ge:Mn dilute magnetic semiconductor films. We find strong indications for a frozen state of Ge_{1-x}Mn_{x}, with freezing temperatures of T_f=12K and T_f=15K for samples with x=0.04 and x=0.2, respectively, determined from the difference between field-cooled and zero-field-cooled magnetization. For Ge_{0.96}Mn_{0.04}, ac susceptibility measurements show a peak around T_f, with the peak position T'_f shifting as a function of the driving frequency f by Delta T_f' / [T_f' Delta log f] ~ 0.06, whereas for sample Ge_{0.8}Mn_{0.2} a more complicated behavior is observed. Furthermore, both samples exhibit relaxation effects of the magnetization after switching the magnitude of the external magnetic field below T_f which are in qualitative agreement with the field- and zero-field-cooled magnetization measurements. These findings consistently show that Ge:Mn exhibits a frozen magnetic state at low temperatures and that it is not a conventional ferromagnet.
dc.descriptionRevised version contains extended interpretation of experimental data
dc.identifierhttps://arxiv.org/abs/cond-mat/0604041
dc.identifierhttp://arxiv.org/abs/cond-mat/0604041
dc.identifierPhys. Rev. B 74, 045330 (2006)
dc.identifierdoi:10.1103/PhysRevB.74.045330
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/109592
dc.subjectMaterials Science
dc.titleSpin-glass-like behavior of Ge:Mn
dc.typetext

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