Room temperature observation of electron resonant tunneling through InAs/AlAs quantum dots

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dc.creatorSun, Jie
dc.creatorLi, Ruoyuan
dc.creatorZhao, Chang
dc.creatorYu, Like
dc.creatorYe, Xiaoling
dc.creatorXu, Bo
dc.creatorChen, Yonghai
dc.creatorWang, Zhanguo
dc.date2007-12-06
dc.date.accessioned2026-07-07T08:47:41Z
dc.date.available2026-07-07T08:47:41Z
dc.descriptionMolecular beam epitaxy is employed to manufacture self-assembled InAs/AlAs quantum-dot resonant tunneling diodes. Resonant tunneling current is superimposed on the thermal current, and they make up the total electron transport in devices. Steps in current-voltage characteristics and peaks in capacitance-voltage characteristics are explained as electron resonant tunneling via quantum dots at 77K or 300K, and this is the first time that resonant tunneling is observed at room temperature in III-V quantum-dot materials. Hysteresis loops in the curves are attributed to hot electron injection/emission process of quantum dots, which indicates the concomitant charging/discharging effect.
dc.descriptionFirst time observation of electron resonant tunneling through InAs quantum dots
dc.identifierhttps://arxiv.org/abs/0712.0972
dc.identifierhttp://arxiv.org/abs/0712.0972
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/143689
dc.subjectMesoscale and Nanoscale Physics
dc.titleRoom temperature observation of electron resonant tunneling through InAs/AlAs quantum dots
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