Si3N4 single-crystal nanowires grown from silicon micro and nanoparticles near the threshold of passive oxidation

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dc.creatorFarjas, J.
dc.creatorRath, C.
dc.creatorPinyol, A.
dc.creatorRoura, P.
dc.creatorBertran, E.
dc.date2008-11-21
dc.date.accessioned2026-07-07T10:20:08Z
dc.date.available2026-07-07T10:20:08Z
dc.descriptionA simple and most promising oxide-assisted catalyst-free method is used to prepare silicon nitride nanowires that give rise to high yield in a short time. After a brief analysis of the state of the art, we reveal the crucial role played by the oxygen partial pressure: when oxygen partial pressure is slightly below the threshold of passive oxidation, a high yield inhibiting the formation of any silica layer covering the nanowires occurs and thanks to the synthesis temperature one can control nanowire dimensions.
dc.identifierhttps://arxiv.org/abs/0811.3575
dc.identifierhttp://arxiv.org/abs/0811.3575
dc.identifierAppl. Phys. Lett. 87, 192114 (2005)
dc.identifierdoi:10.1063/1.2130380
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/174755
dc.subjectMaterials Science
dc.titleSi3N4 single-crystal nanowires grown from silicon micro and nanoparticles near the threshold of passive oxidation
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