Sensor Simulation and position calibration for the CMS pixel detector

Simple item page
dc.creatorChiochia, V.
dc.creatorAlagoz, E.
dc.creatorSwartz, M.
dc.date2006-03-23
dc.date.accessioned2026-07-07T10:47:03Z
dc.date.available2026-07-07T10:47:03Z
dc.descriptionIn this paper a detailed simulation of irradiated pixel sensors was used to investigate the effects of radiation damage on charge sharing and position determination. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trapping of charge carriers. We show that charge sharing functions extracted from the simulation can be parameterized as a function of the inter-pixel position and used to improve the position determination. For sensors irradiated to Phi=5.9x10^14 n/cm^2 a position resolution below 15 um can be achieved after calibration.
dc.descriptionPresented at the 14th Int. Workshop on Vertex Detectors (Vertex 2005), November 7-11 2005, Chuzenji Lake, Nikko, Japan. 4 pages, 1 figure
dc.identifierhttps://arxiv.org/abs/physics/0603192
dc.identifierhttp://arxiv.org/abs/physics/0603192
dc.identifierNucl.Instrum.Meth.A569:132-135,2006
dc.identifierdoi:10.1016/j.nima.2006.09.024
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/183442
dc.subjectInstrumentation and Detectors
dc.titleSensor Simulation and position calibration for the CMS pixel detector
dc.typetext

Files

Collections

arXiv