Local and regular plasma oscillations in bulk donor type semiconductors

Thumbnail Image

Date

Authors

Journal Title

Journal ISSN

Volume Title

Publisher

Abstract

Description

Restoring force acts on the electronic cloud of the outer electrons of a neutral or charged impurity atom when it is shifted relative to the inner charged core. Because of this the dipole oscillation arises, which influences considerably the dispersion law of the plasma oscillation in bulk donor semiconductors. Assuming that only one transition of the outer electron from the ground state to the first excited state is essential, the dispersion law is calculated. It is shown that calculated dispersion law consists of two separate branches, one of them originates from the regular plasma oscillation of the free electrons of a conductivity band, and the other one stems from the local oscillation of the outer electrons bounded to the impurity atoms.
Interaction of regular and local plasma oscillations in semiconductors is studied

Keywords

Materials Science, Plasma Physics

Citation

URI

http://salesiana.dossiersoluciones.com/handle/123456789/123609

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/0702204
 http://arxiv.org/abs/cond-mat/0702204
 Facta Universitatis: Series Physics, Chemistry and Technology, V. 2, N 5, pp. 253 - 258, 2003

Collections

arXiv