Anisotropic Electron Spin Lifetime in (In,Ga)As/GaAs (110) Quantum Wells

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dc.creatorSchreiber, L.
dc.creatorDuda, D.
dc.creatorBeschoten, B.
dc.creatorGüntherodt, G.
dc.creatorSchönherr, H. -P.
dc.creatorHerfort, J.
dc.date2007-01-05
dc.date2007-05-30
dc.date.accessioned2026-07-07T08:05:43Z
dc.date.available2026-07-07T08:05:43Z
dc.descriptionAnisotropic electron spin lifetimes in strained undoped (In,Ga)As/GaAs (110) quantum wells of different width and height are investigated by time-resolved Faraday rotation and time-resolved transmission and are compared to the (001)-orientation. From the suppression of spin precession, the ratio of in-plane to out-of-plane spin lifetimes is calculated. Whereas the ratio increases with In concentration in agreement with theory, a surprisingly high anisotropy of 480 is observed for the broadest quantum well, when expressed in terms of spin relaxation times.
dc.description4 pages, 4 figures, revised
dc.identifierhttps://arxiv.org/abs/cond-mat/0701104
dc.identifierhttp://arxiv.org/abs/cond-mat/0701104
dc.identifierPhys. Rev. B75, 193304 (2007)
dc.identifierdoi:10.1103/PhysRevB.75.193304
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/130368
dc.subjectMaterials Science
dc.titleAnisotropic Electron Spin Lifetime in (In,Ga)As/GaAs (110) Quantum Wells
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