Bandgap renormalization of modulation doped quantum wires

dc.creatorSedlmaier, S.
dc.creatorStopa, M.
dc.creatorSchedelbeck, G.
dc.creatorWegscheider, W.
dc.creatorAbstreiter, G.
dc.date1999-10-01
dc.date.accessioned2026-07-07T03:14:42Z
dc.date.available2026-07-07T03:14:42Z
dc.descriptionWe measure the photoluminescence spectra for an array of modulation doped, T-shaped quantum wires as a function of the 1d density n_e which is modulated with a surface gate. We present self-consistent electronic structure calculations for this device which show a bandgap renormalization which, when corrected for excitonic energy and its screening, are largely insensitive to n_e and which are in quantitatively excellent agreement with the data. The calculation (cf. cond-mat/9908349) shows the importance of including orthogonality between the screening electrons and the electron(s) bound to the hole. The calculations show that electron and hole remain bound up to 3 x 10^6 cm^-1 and that therefore the stability of the exciton far exceeds the conservative Mott criterion.
dc.description4 pages, revtex, 4 figs
dc.identifierhttps://arxiv.org/abs/cond-mat/9910002
dc.identifierhttp://arxiv.org/abs/cond-mat/9910002
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/29774
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleBandgap renormalization of modulation doped quantum wires
dc.typetext

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