29Si Nuclear-Spin Decoherence Process Directly Observed by Multiple Spin-Echoes for Pure and Carrier-less Silicon

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dc.creatorWatanabe, Shinji
dc.creatorSasaki, Susumu
dc.date2003-10-08
dc.date.accessioned2026-07-07T02:54:02Z
dc.date.available2026-07-07T02:54:02Z
dc.descriptionWe report on the 29Si nuclear spin decoherence time at room temperature for a pure (99.99999%, 7N) and carrier-less (p-type, doping level of 10^15cm-3) silicon in which 29Si nuclei are naturally abundant (4.7%). Despite the experimental difficulties coming from the extremely long spin-lattice relaxation time T1 (of the order of 10^4 s), we have successfully observed a series of spin-echoes of which the time dependence is characterized by the decoherence time T2. We found that the decoherence process deviates from a single Gaussian or Lorentzian function but is well-reproduced by a bi-exponential function with the shorter T2S = 15\pm5 ms and the longer T2L = 200\pm20 ms.
dc.description9 pages, 3 figures, to appear in Jpn. J. Appl. Phys
dc.identifierhttps://arxiv.org/abs/cond-mat/0310166
dc.identifierhttp://arxiv.org/abs/cond-mat/0310166
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/22390
dc.subjectMaterials Science
dc.subjectMesoscale and Nanoscale Physics
dc.title29Si Nuclear-Spin Decoherence Process Directly Observed by Multiple Spin-Echoes for Pure and Carrier-less Silicon
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