H/T Scaling of the Magnetoconductance in Two Dimensions near the Conductor-Insulator Transition

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dc.creatorSimonian, D.
dc.creatorKravchenko, S. V.
dc.creatorSarachik, M. P.
dc.creatorPudalov, V. M.
dc.date1997-12-18
dc.date1998-01-12
dc.date.accessioned2026-07-07T03:09:40Z
dc.date.available2026-07-07T03:09:40Z
dc.descriptionFor an electron density near the H=0 insulator-to-conductor transition, the magnetoconductivity of the low-temperature conducting phase in high-mobility silicon MOSFETs is consistent with the form $Δσ(H_{||},T)\equivσ(H_{||},T)-σ(0,T) = f(H_{||}/T)$ for magnetic fields $H_{||}$ applied parallel to the plane of the electron system. This sets a valuable constraint on theory and provides further evidence that the electron spin is central to the anomalous H=0 conducting phase in two dimensions.
dc.descriptionReferences updated and comparison with recent theory added
dc.identifierhttps://arxiv.org/abs/cond-mat/9712223
dc.identifierhttp://arxiv.org/abs/cond-mat/9712223
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/27978
dc.subjectDisordered Systems and Neural Networks
dc.subjectStrongly Correlated Electrons
dc.titleH/T Scaling of the Magnetoconductance in Two Dimensions near the Conductor-Insulator Transition
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