Anisotropic magnetic field dependence of many-body enhanced electron tunnelling through a quantum dot

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dc.creatorVdovin, E. E.
dc.creatorKhanin, Yu. N.
dc.creatorMakarovsky, O.
dc.creatorPatane, A.
dc.creatorEaves, L.
dc.creatorHenini, M.
dc.creatorMellor, C. J.
dc.creatorBenedict, K. A.
dc.creatorAirey, R.
dc.date2007-03-23
dc.date.accessioned2026-07-07T07:53:22Z
dc.date.available2026-07-07T07:53:22Z
dc.descriptionWe investigate the effect of an applied magnetic field on resonant tunneling of electrons through the bound states of self-assembled InAs quantum dots (QDs) embedded within an (AlGa)As tunnel barrier. At low temperatures (no more than 2 K), a magnetic field B applied either parallel or perpendicular to the direction of current flow causes a significant enhancement of the tunnel current. For the latter field configuration, we observe a strong angular anisotropy of the enhanced current when B is rotated in the plane of the quantum dot layer. We attribute this behavior to the effect of the lowered symmetry of the QD eigenfunctions on the electron-electron interaction.
dc.descriptionRevtex4, 6 pages, 6 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0703614
dc.identifierhttp://arxiv.org/abs/cond-mat/0703614
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/126230
dc.subjectMesoscale and Nanoscale Physics
dc.subjectStrongly Correlated Electrons
dc.titleAnisotropic magnetic field dependence of many-body enhanced electron tunnelling through a quantum dot
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