Pseudoepitaxial transrotational structures in 14 nm-thick NiSi layers on [001] silicon

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dc.creatorAlberti, Alessandra
dc.creatorBongiorno, Corrado
dc.creatorCafra, Brunella
dc.creatorMannino, Giovanni
dc.creatorRimini, Emanuele
dc.creatorMetzger, Till
dc.creatorMocuta, Cristian
dc.creatorKammler, Thorsten
dc.creatorFeudel, Thomas
dc.date2005-10-25
dc.date.accessioned2026-07-07T06:45:29Z
dc.date.available2026-07-07T06:45:29Z
dc.descriptionIn a system consisting of two different lattices, the structural stability is ensured when an epitaxial relationship occurs between them and allows the system to retain the stress, avoiding the formation of a polycristalline film. The phenomenon occurs if the film thickness does not exceed a critical value. Here we show that, in spite of its orthorombic structure, a 14nm-thick NiSi layer can three-dimensionally (3D) adapt to the cubic Si lattice by forming transrotational domains. Each domain arises by the continuous bending of the NiSi lattice, maintaining a close relationship with the substrate structure. The presence of transrotational domains does not cause a roughening of the layer but instead it improves the structural and electrical stability of the silicide in comparison with a 24nm-thick layer formed using the same annealing process. These results have relevant implications on thickness scaling of NiSi layers currently used as metallizations of electronic devices.
dc.description18 pages with 5 colour figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0510660
dc.identifierhttp://arxiv.org/abs/cond-mat/0510660
dc.identifierActa Crystallographica B, 61, 486-491 (2005)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/103056
dc.subjectMaterials Science
dc.titlePseudoepitaxial transrotational structures in 14 nm-thick NiSi layers on [001] silicon
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