Nanoindentation-Induced Phase Transformation in Silicon
| dc.creator | Rao, R. | |
| dc.creator | Bradby, J. -E. | |
| dc.creator | Williams, J. -S. | |
| dc.date | 2007-08-09 | |
| dc.date.accessioned | 2026-07-07T08:22:56Z | |
| dc.date.available | 2026-07-07T08:22:56Z | |
| dc.description | Nanoindentation-induced phase transformation in silicon has been studied. A series of nanoindentations were made with the sharp diamond Berkovich tip. During nanoindentations, maximum load ranged from 2000 $μ$N to 5000 $μ$N, with a 1000 $μ$N/sec loading rate. Slow unloading rate at 100$μ$N/sec was chosen to favor the formation of the crystalline end phases, high pressure phase (Si-III and Si-XII). Fast unloading rate at 1000$μ$N/sec was used to obtain amorphous phase. The phase transformation was examined by Raman spectroscopy and plan-view transmission electron microscopy (TEM). HPP have been identified even if no "pop-in" and "pop-out" observed in load-depth characteristics curves. HPP appeared in c-Si when the maximum load up to 3000 $μ$N. TEM images have been revealed that the optimization HPP transformation in c-Si at the nanoscale occurred when the maximum load applied at 5000 $μ$N. | |
| dc.identifier | https://arxiv.org/abs/0708.1294 | |
| dc.identifier | http://arxiv.org/abs/0708.1294 | |
| dc.identifier | Dans European Nano Systems Worshop - ENS 2006, Paris : France (2006) | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/135822 | |
| dc.subject | Materials Science | |
| dc.title | Nanoindentation-Induced Phase Transformation in Silicon | |
| dc.type | text |