Potential barrier lowering and electrical transport at the LaAlO$_{3}$/SrTiO$_{3}$ heterointerface

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dc.creatorWong, Franklin J.
dc.creatorChi, Miaofang
dc.creatorChopdekar, Rajesh V.
dc.creatorNelson-Cheeseman, Brittany B.
dc.creatorBrowning, Nigel D.
dc.creatorSuzuki, Yuri
dc.date2008-09-04
dc.date.accessioned2026-07-07T10:00:57Z
dc.date.available2026-07-07T10:00:57Z
dc.descriptionUsing a combination of vertical transport measurements across and lateral transport measurements along the LaAlO$_{3}$/SrTiO$_{3}$ heterointerface, we demonstrate that significant potential barrier lowering and band bending are the cause of interfacial metallicity. Barrier lowering and enhanced band bending extends over 2.5 nm into LaAlO$_{3}$ as well as SrTiO$_{3}$. We explain origins of high-temperature carrier saturation, lower carrier concentration, and higher mobility in the sample with the thinnest LaAlO$_{3}$ film on a SrTiO$_{3}$ substrate. Lateral transport results suggest that parasitic interface scattering centers limit the low-temperature lateral electron mobility of the metallic channel.
dc.description10 pages, 3 figures, and 1 table
dc.identifierhttps://arxiv.org/abs/0809.0926
dc.identifierhttp://arxiv.org/abs/0809.0926
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/168481
dc.subjectMaterials Science
dc.subjectStrongly Correlated Electrons
dc.titlePotential barrier lowering and electrical transport at the LaAlO$_{3}$/SrTiO$_{3}$ heterointerface
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