1/f noise near the free surface of a semiconductor
| dc.creator | Blachowicz, Tomasz | |
| dc.date | 2008-03-29 | |
| dc.date.accessioned | 2026-07-07T09:29:20Z | |
| dc.date.available | 2026-07-07T09:29:20Z | |
| dc.description | This paper describes the so-called 1/f noise generated within the depleted region below a free semiconducting surface. It was shown that there is a link between the 1/f noise, which can be controlled by the band-bending, and the very narrow energy states (E<<kT) located on the top surface and vanishing into the bulk region. Also, it was shown that the noise can be lowered when the band-bending is reduced. A quantitative description of this reduction was provided. This study considered the n-type semiconductor. | |
| dc.identifier | https://arxiv.org/abs/0803.4287 | |
| dc.identifier | http://arxiv.org/abs/0803.4287 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/157745 | |
| dc.subject | Materials Science | |
| dc.title | 1/f noise near the free surface of a semiconductor | |
| dc.type | text |