Hall resistivity of granular metals

dc.creatorKharitonov, M. Yu.
dc.creatorEfetov, K. B.
dc.date2006-09-28
dc.date.accessioned2026-07-07T08:31:53Z
dc.date.available2026-07-07T08:31:53Z
dc.descriptionWe calculate the Hall conductivity $\sig_{xy}$ and resistivity $ρ_{xy}$ of a granular system at large tunneling conductance $g_{T}\gg 1$. We show that in the absence of Coulomb interaction the Hall resistivity depends neither on the tunneling conductance nor on the intragrain disorder and is given by the classical formula $ρ_{xy}=H/(n^* e c)$, where $n^*$ differs from the carrier density $n$ inside the grains by a numerical coefficient determined by the shape of the grains. The Coulomb interaction gives rise to logarithmic in temperature $T$ correction to $ρ_{xy}$ in the range $\Ga \lesssim T \lesssim \min(g_T E_c,\ETh)$, where $\Ga$ is the tunneling escape rate, $E_c$ is the charging energy and $\ETh$ is the Thouless energy of the grain.
dc.description4 pages, 1 figure
dc.identifierhttps://arxiv.org/abs/cond-mat/0609736
dc.identifierhttp://arxiv.org/abs/cond-mat/0609736
dc.identifierPhys. Rev. Lett. 99, 056803 (2007)
dc.identifierdoi:10.1103/PhysRevLett.99.056803
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/138634
dc.subjectMesoscale and Nanoscale Physics
dc.subjectStrongly Correlated Electrons
dc.titleHall resistivity of granular metals
dc.typetext

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