Computational study of exciton generation in suspended carbon nanotube transistors

Simple item page
dc.creatorKoswatta, Siyuranga O.
dc.creatorPerebeinos, Vasili
dc.creatorLundstrom, Mark S.
dc.creatorAvouris, Phaedon
dc.date2008-05-02
dc.date.accessioned2026-07-07T09:43:53Z
dc.date.available2026-07-07T09:43:53Z
dc.descriptionOptical emission from carbon nanotube transistors (CNTFETs) has recently attracted significant attention due to its potential applications. In this paper, we use a self-consistent numerical solution of the Boltzmann transport equation in the presence of both phonon and exciton scattering to present a detailed study of the operation of a partially suspended CNTFET light emitter, which has been discussed in a recent experiment. We determine the energy distribution of hot carriers in the CNTFET, and, as reported in the experiment, observe localized generation of excitons near the trench-substrate junction and an exponential increase in emission intensity with a linear increase in current versus gate voltage. We further provide detailed insight into device operation, and propose optimization schemes for efficient exciton generation; a deeper trench increases the generation efficiency, and use of high-k substrate oxides could lead to even larger enhancements.
dc.description17 pages, 5 figures
dc.identifierhttps://arxiv.org/abs/0805.0246
dc.identifierhttp://arxiv.org/abs/0805.0246
dc.identifierNano Letters, 8 (6), pp. 1596--1601, 2008.
dc.identifierdoi:10.1021/nl0801226
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/162681
dc.subjectMesoscale and Nanoscale Physics
dc.titleComputational study of exciton generation in suspended carbon nanotube transistors
dc.typetext

Files

Collections

arXiv