The epitaxial-graphene/graphene-oxide junction, an essential step towards epitaxial graphene electronics

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dc.creatorWu, Xiaosong
dc.creatorSprinkle, Mike
dc.creatorLi, Xuebin
dc.creatorMing, Fan
dc.creatorBerger, Claire
dc.creatorde Heer, Walt A.
dc.date2007-12-05
dc.date2008-07-07
dc.date.accessioned2026-07-07T09:48:24Z
dc.date.available2026-07-07T09:48:24Z
dc.descriptionGraphene oxide (GO) flakes have been deposited to bridge the gap between two epitaxial graphene electrodes to produce all-graphene devices. Electrical measurements indicate the presence of Schottky barriers (SB) at the graphene/graphene oxide junctions, as a consequence of the band-gap in GO. The barrier height is found to be about 0.7 eV, and is reduced after annealing at 180 $^\circ$C, implying that the gap can be tuned by changing the degree of oxidation. A lower limit of the GO mobility was found to be 850 cm$^2$/Vs, rivaling silicon. {\it In situ} local oxidation of patterned epitaxial graphene has been achieved.
dc.description5 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/0712.0820
dc.identifierhttp://arxiv.org/abs/0712.0820
dc.identifierPhys. Rev. Lett. 101, 026801 (2008)
dc.identifierdoi:10.1103/PhysRevLett.101.026801
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/164201
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleThe epitaxial-graphene/graphene-oxide junction, an essential step towards epitaxial graphene electronics
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