Shot Noise in Tunneling through a Quantum Dot Array

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dc.creatorKiesslich, G.
dc.creatorWacker, A.
dc.creatorSchoell, E.
dc.creatorNauen, A.
dc.creatorHohls, F.
dc.creatorHaug, R. J.
dc.date2002-09-23
dc.date.accessioned2026-07-07T02:47:23Z
dc.date.available2026-07-07T02:47:23Z
dc.descriptionThe shot noise suppression in a sample containing a layer of self-assembled InAs quantum dots has been investigated experimentally and theoretically. The observation of a non-monotonic dependence of the Fano factor on the bias voltage in a regime where only few quantum dot ground states contribute to the tunneling current is analyzed by a master equation model. Under the assumption of tunneling through states without Coulomb interaction this behaviour can be qualitatively reproduced by an analytical expression.
dc.description4 pages, 2 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0209523
dc.identifierhttp://arxiv.org/abs/cond-mat/0209523
dc.identifierphys. status solidi (c) 0, 1293 (2003)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/19993
dc.subjectCondensed Matter
dc.titleShot Noise in Tunneling through a Quantum Dot Array
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