Combined atomic force microscope and electron-beam lithography used for the fabrication of variable-coupling quantum dots

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dc.creatorRogge, M. C.
dc.creatorFuehner, C.
dc.creatorKeyser, U. F.
dc.creatorHaug, R. J.
dc.creatorBichler, M.
dc.creatorAbstreiter, G.
dc.creatorWegscheider, W.
dc.date2003-07-30
dc.date.accessioned2026-07-07T06:26:14Z
dc.date.available2026-07-07T06:26:14Z
dc.descriptionWe have combined direct nanofabrication by local anodic oxidation with conventional electron-beam lithography to produce a parallel double quantum dot based on a GaAs/AlGaAs heterostructure. The combination of both nanolithography methods allows to fabricate robust in-plane gates and Cr/Au top gate electrodes on the same device for optimal controllability. This is illustrated by the tunability of the interdot coupling in our device. We describe our fabrication and alignment scheme in detail and demonstrate the tunability in low-temperature transport measurements.
dc.description4 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0307743
dc.identifierhttp://arxiv.org/abs/cond-mat/0307743
dc.identifierAppl. Phys. Lett. 83, 1163 (2003)
dc.identifierdoi:10.1063/1.1599972
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/97048
dc.subjectMesoscale and Nanoscale Physics
dc.titleCombined atomic force microscope and electron-beam lithography used for the fabrication of variable-coupling quantum dots
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