Dark channels in resonant tunneling transport through artificial atoms

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dc.creatorVaz, Eduardo
dc.creatorKyriakidis, Jordan
dc.date2006-08-11
dc.date2009-02-23
dc.date.accessioned2026-07-07T12:45:09Z
dc.date.available2026-07-07T12:45:09Z
dc.descriptionWe investigate sequential tunneling through a multilevel quantum dot confining multiple electrons, in the regime where several channels are available for transport within the bias window. By analyzing solutions to the master equations of the reduced density matrix, we give general conditions on when the presence of a second transport channel in the bias window quenches transport through the quantum dot. These conditions are in terms of distinct tunneling anisotropies which may aid in explaining the occurrence of negative differential conductance in quantum dots in the nonlinear regime.
dc.description4 pages, 3 figures, REVTeX4
dc.identifierhttps://arxiv.org/abs/cond-mat/0608272
dc.identifierhttp://arxiv.org/abs/cond-mat/0608272
dc.identifierJ. Chem. Phys. 129, 024703 (2008)
dc.identifierdoi:10.1063/1.2949510
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/221000
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleDark channels in resonant tunneling transport through artificial atoms
dc.typetext

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