Influence of Grain size on the Electrical Properties of ${\rm Sb_2Te_3}$ Polycrystalline Films

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dc.creatorArun, P.
dc.creatorVedeshwar, A. G.
dc.date2004-08-05
dc.date.accessioned2026-07-07T02:59:36Z
dc.date.available2026-07-07T02:59:36Z
dc.descriptionResistance of vacuum deposited ${\rm Sb_2Te_3}$ films of thickness between 100-500nm has been measured in vacuum. It is found that the resistance of the polycrystalline films strongly depends on the grain size and inter-granular voids. The charge carrier are shown to cross this high resistivity inter- granular void by ohmic conduction. The barrier height as well as temperature coefficient of resistance are also shown to depend on the grain size and inter- grain voids.
dc.description5 pages and 7 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0408116
dc.identifierhttp://arxiv.org/abs/cond-mat/0408116
dc.identifierMater. Res. Bull., v38, 1929-38 (2003)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/24573
dc.subjectMaterials Science
dc.titleInfluence of Grain size on the Electrical Properties of ${\rm Sb_2Te_3}$ Polycrystalline Films
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