Tunnelling through a semiconducting spacer: complex band predictions vs. thin film calculations

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dc.creatorPeralta-Ramos, J.
dc.creatorMilano, J.
dc.creatorLlois, A. M.
dc.date2008-10-02
dc.date.accessioned2026-07-07T10:07:08Z
dc.date.available2026-07-07T10:07:08Z
dc.descriptionUsing a simple tight-binding model, we compare the limitations of the tunnelling predictions coming out of the complex band structure of a semiconductor with the output of thin film calculations done for the same semiconducting spacer but considering it to be of finite width, and sandwiched by metallic electrodes. The comparison is made as a function of spacer width and interfacial roughness.
dc.description2004 (16 pages)
dc.identifierhttps://arxiv.org/abs/0810.0453
dc.identifierhttp://arxiv.org/abs/0810.0453
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/170529
dc.subjectMesoscale and Nanoscale Physics
dc.titleTunnelling through a semiconducting spacer: complex band predictions vs. thin film calculations
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