Visible light emitting devices with Schottky contacts on silicon nanocrystals
| dc.creator | Fujita, S. | |
| dc.creator | Sugiyama, N. | |
| dc.date | 1998-05-12 | |
| dc.date.accessioned | 2026-07-07T05:56:11Z | |
| dc.date.available | 2026-07-07T05:56:11Z | |
| dc.description | We have fabricated light emitting diodes (LEDs) with Schottky contacts on Si-nanocrystals formed by simple techniques as used for standard Si devices. Orange electroluminescence (EL) from these LEDs could be seen with the naked eye at room temperature when a reverse bias voltage was applied. The EL spectrum has a major peak with a photon energy of 1.9 eV and a minor peak with a photon energy of 2.2 eV. Since the electrons and holes are injected into the radiative recombination centers related to nanocrystals through avalanche breakdown, the voltage needed for a visible light emission is reduced to 4.0 - 4.5 V, which is low enough to be applied by a standard Si transistor. | |
| dc.description | 9 pages, 4 figures(mail if you need), use revtex.sty | |
| dc.identifier | https://arxiv.org/abs/physics/9805015 | |
| dc.identifier | http://arxiv.org/abs/physics/9805015 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/87514 | |
| dc.subject | Optics | |
| dc.title | Visible light emitting devices with Schottky contacts on silicon nanocrystals | |
| dc.type | text |