Strain in heteroepitaxial growth
| dc.creator | Somfai, E. | |
| dc.creator | Sander, L. M. | |
| dc.date | 1999-09-22 | |
| dc.date.accessioned | 2026-07-07T03:14:37Z | |
| dc.date.available | 2026-07-07T03:14:37Z | |
| dc.description | We use atomistic simulations with an empirical potential (EAM) to study the elastic effects of heteroepitaxial islands on adatom diffusion. We measure the diffusion barrier on pure stressed substrate and near a misfit island, as well as the detachment barrier from islands of different size. | |
| dc.description | 6 pages, 9 figures | |
| dc.identifier | https://arxiv.org/abs/cond-mat/9909328 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/9909328 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/29740 | |
| dc.subject | Materials Science | |
| dc.title | Strain in heteroepitaxial growth | |
| dc.type | text |