Structural modifications induced in hydrogenated amorphous Si/Ge multilayers by heat treatments

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dc.creatorFrigeri, C.
dc.creatorSerenyi, M.
dc.creatorCsik, A.
dc.creatorErdelyi, Z.
dc.creatorBeke, D. L.
dc.creatorNasi, L.
dc.date2009-02-11
dc.date.accessioned2026-07-07T12:40:31Z
dc.date.available2026-07-07T12:40:31Z
dc.descriptionA study is presented of the structural changes occurring as a function of the annealing conditions in hydrogenated amorphous Si/Ge multilayers prepared by sputtering. Annealing changes the structure of the as-deposited multilayer except for the less severe conditions here applied (150 oC, time<22 h). For higher temperatures and/or times, the modifications consist of layer intermixing and surface degradation in the shape of bumps and craters. They are argued to be due to the formation of H bubbles upon heating. Hydrogen should be mostly released from the amorphous Ge layers.
dc.identifierhttps://arxiv.org/abs/0902.1814
dc.identifierhttp://arxiv.org/abs/0902.1814
dc.identifierJ Mater Sci: Mater Electron (2008) 19:S289-S293
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/219467
dc.subjectMaterials Science
dc.titleStructural modifications induced in hydrogenated amorphous Si/Ge multilayers by heat treatments
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