Spatially nonuniform energy distribution of electrons in a submicron semiconductor film

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dc.creatorGurevich, Yu. G.
dc.creatorLogvinov, G. N.
dc.creatorTitov, O. Yu.
dc.date1997-06-17
dc.date.accessioned2026-07-07T03:09:06Z
dc.date.available2026-07-07T03:09:06Z
dc.descriptionThe symmetric part of the distribution of the electrons in a semiconductor submicron film, placed between a heater and refrigeration unit, is derived and analyzed. It is shown that, in general, it is of non-Fermi (non-Maxwellian) nature. A new mechanism is proposed to account for the non-Maxwellian form of the symmetric part of the distribution function. This mechanism is based on the different energy dependences of the momentum relaxation time in the bulk of the semiconductor and its skin layer.
dc.description6 pages, RevTeX, AMSMath
dc.identifierhttps://arxiv.org/abs/cond-mat/9706178
dc.identifierhttp://arxiv.org/abs/cond-mat/9706178
dc.identifierSemiconductors 27 (6), June 1993, p. 566--569
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/27753
dc.subjectCondensed Matter
dc.titleSpatially nonuniform energy distribution of electrons in a submicron semiconductor film
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