Evidence for multiple impurity bands in sodium-doped silicon MOSFETs

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dc.creatorFerrus, T.
dc.creatorGeorge, R.
dc.creatorBarnes, C. H. W.
dc.creatorLumpkin, N.
dc.creatorPaul, D. J.
dc.creatorPepper, M.
dc.date2005-10-06
dc.date2006-04-13
dc.date.accessioned2026-07-07T06:44:09Z
dc.date.available2026-07-07T06:44:09Z
dc.descriptionWe report measurements of the temperature-dependent conductivity in a silicon metal-oxide-semiconductor field-effect transistor that contains sodium impurities in the oxide layer. We explain the variation of conductivity in terms of Coulomb interactions that are partially screened by the proximity of the metal gate. The study of the conductivity exponential prefactor and the localization length as a function of gate voltage have allowed us to determine the electronic density of states and has provided arguments for the presence of two distinct bands and a soft gap at low temperature.
dc.description4 pages; 5 figures; Published in PRB Rapid-Communications
dc.identifierhttps://arxiv.org/abs/cond-mat/0510145
dc.identifierhttp://arxiv.org/abs/cond-mat/0510145
dc.identifierPhys. Rev. B 73, 4, 041304 (2006)
dc.identifierdoi:10.1103/PhysRevB.73.041304
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/102682
dc.subjectStrongly Correlated Electrons
dc.titleEvidence for multiple impurity bands in sodium-doped silicon MOSFETs
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