Hole spin relaxation in $p$-type GaAs quantum wires

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dc.creatorLü, C.
dc.creatorZülicke, U.
dc.creatorWu, M. W.
dc.date2008-08-08
dc.date2008-10-01
dc.date.accessioned2026-07-07T10:12:18Z
dc.date.available2026-07-07T10:12:18Z
dc.descriptionWe investigate the spin relaxation of $p$-type GaAs quantum wires by numerically solving the fully microscopic kinetic spin Bloch equations. We find that the quantum-wire size influences the spin relaxation time effectively by modulating the energy spectrum and the heavy-hole--light-hole mixing of wire states. The effects of quantum-wire size, temperature, hole density, and initial polarization are investigated in detail. We show that, depending on the situation, the spin relaxation time can either increase or decrease with hole density. Due to the different subband structure and effects arising from spin-orbit coupling, many spin-relaxation properties are quite different from those of holes in the bulk or in quantum wells, and the inter-subband scattering makes a marked contribution to the spin relaxation.
dc.description10 pages, 7 figures, Phys. Rev. B 78, 2008, in press
dc.identifierhttps://arxiv.org/abs/0808.1170
dc.identifierhttp://arxiv.org/abs/0808.1170
dc.identifierPhys. Rev. B 78, 165321 (2008)
dc.identifierdoi:10.1103/PhysRevB.78.165321
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/172138
dc.subjectMaterials Science
dc.titleHole spin relaxation in $p$-type GaAs quantum wires
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