Onset of ferromagnetism in low-doped GaMnAs

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dc.creatorSheu, B. L.
dc.creatorMyers, R. C.
dc.creatorTang, J. -M.
dc.creatorSamarth, N.
dc.creatorAwschalom, D. D.
dc.creatorSchiffer, P.
dc.creatorFlatté, M. E.
dc.date2007-08-08
dc.date.accessioned2026-07-07T09:53:36Z
dc.date.available2026-07-07T09:53:36Z
dc.descriptionWe develop a quantitatively predictive theory for impurity-band ferromagnetism in the low-doping regime of GaMnAs and compare with experimental measurements of a series of samples whose compositions span the transition from paramagnetic insulating to ferromagnetic conducting behavior. The theoretical Curie temperatures depend sensitively on the local fluctuations in the Mn-hole binding energy, which originates from disorder in the Mn distribution as well as the presence of As antisite defects. The experimentally-determined hopping energy at the Curie temperature is roughly constant over a series of samples whose conductivities vary more than 10^4 and whose hole concentrations vary more than 10^2. Thus in this regime the hopping energy is an excellent predictor of the Curie temperature for a sample, in agreement with the theory.
dc.description5 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/0708.1063
dc.identifierhttp://arxiv.org/abs/0708.1063
dc.identifierPhys. Rev. Lett. 99, 227205 (2007)
dc.identifierdoi:10.1103/PhysRevLett.99.227205
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/166010
dc.subjectMaterials Science
dc.subjectMesoscale and Nanoscale Physics
dc.titleOnset of ferromagnetism in low-doped GaMnAs
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