Non-adiabatic Kohn-anomaly in a doped graphene monolayer

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dc.creatorLazzeri, Michele
dc.creatorMauri, Francesco
dc.date2006-11-28
dc.date.accessioned2026-07-07T07:43:57Z
dc.date.available2026-07-07T07:43:57Z
dc.descriptionWe compute, from first-principles, the frequency of the E2g, Gamma phonon (Raman G-band) of graphene, as a function of the charge doping. Calculations are done using i) the adiabatic Born-Oppenheimer approximation and ii) time-dependent perturbation theory to explore dynamic effects beyond this approximation. The two approaches provide very different results. While, the adiabatic phonon frequency weakly depends on the doping, the dynamic one rapidly varies because of a Kohn anomaly. The adiabatic approximation is considered valid in most materials. Here, we show that doped graphene is a spectacular example where this approximation miserably fails.
dc.description5 pages, 3 figures, Accepted by Phys. Rev. Lett
dc.identifierhttps://arxiv.org/abs/cond-mat/0611708
dc.identifierhttp://arxiv.org/abs/cond-mat/0611708
dc.identifierPhys. Rev. Lett. 97, 266407 (2006)
dc.identifierdoi:10.1103/PhysRevLett.97.266407
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/123025
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleNon-adiabatic Kohn-anomaly in a doped graphene monolayer
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