Spin injection and accumulation in inhomogeneous semiconductors
| dc.creator | Csontos, Dan | |
| dc.creator | Ulloa, Sergio E. | |
| dc.date | 2005-07-19 | |
| dc.date.accessioned | 2026-07-07T06:29:37Z | |
| dc.date.available | 2026-07-07T06:29:37Z | |
| dc.description | We present a study of spin transport in charge and spin inhomogeneous semiconductor systems. In particular, we investigate the propagation of spin-polarized electrons through a boundary between two semiconductor regions with different doping concentrations. We use a theoretical and numerical method, presented in this paper, based on a self-consistent treatment of a two-component version of the Boltzmann transport equation. We show that space-charge effects strongly influence the spin transport properties, in particular giving rise to pronounced spin accumulation and spin density enhancement. | |
| dc.description | 4 pages | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0507427 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0507427 | |
| dc.identifier | Physica E 32, 412 (2006) | |
| dc.identifier | doi:10.1016/j.physe.2005.12.152 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/98094 | |
| dc.subject | Materials Science | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.title | Spin injection and accumulation in inhomogeneous semiconductors | |
| dc.type | text |