High-frequency absorption and gain in superlattices: Semiquasistatic approach

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dc.creatorShorokhov, A. V.
dc.creatorAlekseev, K. N.
dc.date2006-02-08
dc.date.accessioned2026-07-07T07:01:36Z
dc.date.available2026-07-07T07:01:36Z
dc.descriptionWe consider a generation and an amplification of THz radiation in semiconductor superlattices under the action of microwave pump field. Electrons belonging to a single miniband of the superlattice interact quasistatically with the pump field and dynamically with a signal THz field. Within this semiquasistic approach we derive elegant difference formulas describing absorption (gain) of the weak THz signal. We present an instructive geometric interpretation of the absorption formulas which allows a search of optimum conditions for the gain employing only a simple qualitative analysis. Our theoretical findings contribute to the development of sources and detectors of THz radiation that are using nonlinear electric properties of semiconductor superlattices.
dc.description28 pages, 11 figures, submitted to Physica E
dc.identifierhttps://arxiv.org/abs/cond-mat/0602209
dc.identifierhttp://arxiv.org/abs/cond-mat/0602209
dc.identifierPhysica E 33 (2006) 284-295
dc.identifierdoi:10.1016/j.physe.2006.03.149
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/108322
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMathematical Physics
dc.titleHigh-frequency absorption and gain in superlattices: Semiquasistatic approach
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